The effects of bond strain on the properties of plasma-deposited silicon oxide films
- 1 July 1987
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 150 (2-3) , L97-L99
- https://doi.org/10.1016/0040-6090(87)90110-6
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Slow fracture model based on strained silicate structuresJournal of Applied Physics, 1984
- Effects of humidity on stress in thin silicon dioxide filmsJournal of Applied Physics, 1982
- Characterization of Plasma‐Deposited Silicon DioxideJournal of the Electrochemical Society, 1981
- The hydrogen content of plasma-deposited silicon nitrideJournal of Applied Physics, 1978
- Silicon oxide and nitride films deposited by an r.f. glow-dischargeThin Solid Films, 1968
- Structural Evaluation of Silicon Oxide FilmsJournal of the Electrochemical Society, 1965