Transmission electron microscopical imaging of lateral implantation effects near mask edges in B+-implanted Si wafers
- 1 January 1978
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 13 (12) , 791-795
- https://doi.org/10.1051/rphysap:019780013012079100
Abstract
Transmission electron microscopy (TEM) of cross-sectional specimens is used to image the radiation damage distribution near mask edges in B +-implanted Si structures. The lateral spread of the radiation damage is calculated for arbitrarily shaped mask edges. Agreement between theoretical calculations and experimental results shows the need to take account of lateral spread in ion-implanted very-large-scale-integrated semiconductor devices (VLSI)Keywords
This publication has 3 references indexed in Scilit:
- Structural and electrical profiles for double damage layers in ion-implanted siliconElectronics Letters, 1977
- Distribution of implanted ions under arbitrarily shaped mask edgesPhysica Status Solidi (a), 1977
- Lateral spread of damage formed by ion implantationJournal of Applied Physics, 1976