Distribution of implanted ions under arbitrarily shaped mask edges
- 1 February 1977
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 39 (2) , 595-599
- https://doi.org/10.1002/pssa.2210390228
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Measurements of the lateral spread of heavy ions implanted into siliconRadiation Effects, 1976
- Lateral spread of ion-implanted impurities in siliconJournal of Applied Physics, 1974
- Lateral spread of 31P and 11B ions implanted in siliconJournal of Applied Physics, 1973
- Backscattering study on lateral spread of implanted ionsApplied Physics Letters, 1973
- Lateral spread of boron ions implanted in siliconApplied Physics Letters, 1972
- Theoretical Considerations on Lateral Spread of Implanted IonsJapanese Journal of Applied Physics, 1972