16Gbit/s multiplexer IC using double mesa Si/SiGe heterojunction bipolar transistors
- 9 December 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (25) , 2185-2187
- https://doi.org/10.1049/el:19931468
Abstract
A double mesa Si/SiGe heterojunction bipolar transistor (HBT) was developed for application in integrated circuits. The HBT is characterised by an emitter base heterojunction and consequently by a high base doping concentration. By using these transistors an integrated digital circuit, a multiplexer, was implemented. The measured bit rate of this first Si/SiGe HBT circuit was 16Gbit/s.Keywords
This publication has 1 reference indexed in Scilit:
- Sub-20 psec ECL circuits with 50 GHz fmax self-aligned SiGe HBTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992