Sub-20 psec ECL circuits with 50 GHz fmax self-aligned SiGe HBTs
- 1 January 1992
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 397-400
- https://doi.org/10.1109/iedm.1992.307386
Abstract
This paper describes a high fmax self-aligned SiGe heterojunction bipolar transistor (HBT) technology which is based on the self-aligned selective epitaxial growth technology including Ge graded profile and link-base engineering using a BSG sidewall structure. The HBT has a Super Self-aligned Selectively grown SiGe Base (SSSB) structure. Base profile design and a 2-step annealing technique have realized a f/sub T/ of 51 GHz and low sheet resistance at the link-base region, and furthermore have accomplished fmax of as high as 50 GHz. ECL circuits of 19 psec gate delay have been achieved by using this SiGe HBT technology.Keywords
This publication has 2 references indexed in Scilit:
- A novel selective SiGe epitaxial growth technology for self-aligned HBTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emittersIEEE Electron Device Letters, 1992