73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters
- 1 May 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (5) , 259-261
- https://doi.org/10.1109/55.145046
Abstract
The authors report a thermal-cycle emitter process using phosphorus for the fabrication of self-aligned SiGe-base heterojunction bipolar transistors. The low thermal cycle results in extremely, narrow basewidths and preservation of lightly doped spacers in both the emitter-base and base-collector junctions for improved breakdown. Transistors with 35-nm basewidths were obtained with low emitter-base reverse leakage and a peak cutoff frequency of 73 GHz for an intrinsic base sheet resistance of 16 k Omega / Square Operator . Minimum NTL (nonthreshold logic) and ECL (emitter-coupled logic) gate delays of 28 and 34 ps, respectively were obtained with these devices.<>Keywords
This publication has 11 references indexed in Scilit:
- Poly emitter bipolar transistor optimization for an advanced BiCMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- SiGe-base heterojunction bipolar transistors: physics and design issuesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- An Ultra-High Emitter Efficiency Transistor with a Low-Temperature Processed Polysilicon Emitter for High-Speed Bipolar UlsisPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1991
- A reduced-field design concept for high-performance bipolar transistorsIEEE Electron Device Letters, 1989
- Degradation of bipolar transistors under high current stress at 300 KJournal of Applied Physics, 1988
- Comparison of experimental and computed results on arsenic- and phosphorus-doped polysilicon emitter bipolar transistorsIEEE Transactions on Electron Devices, 1987
- Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor depositionApplied Physics Letters, 1986
- Majority and minority carrier transport in polysilicon emitter contactsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Defects in epitaxial multilayers I. Misfit dislocationsJournal of Crystal Growth, 1974