An Ultra-High Emitter Efficiency Transistor with a Low-Temperature Processed Polysilicon Emitter for High-Speed Bipolar Ulsis

Publisher Website

1 January 1991

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 65-66
https://doi.org/10.1109/vlsit.1991.705992

Abstract

No abstract available

Keywords

This publication has 4 references indexed in Scilit:

Properties of High Heat-Resistance µc-SiC_x:H Emitter Silicon HBT's
Japanese Journal of Applied Physics, 1989
Superbeta polysilicon emitter transistors
IEEE Electron Device Letters, 1987
Effect of arsenic segregation on the electrical properties of grain boundaries in polycrystalline silicon
Journal of Applied Physics, 1985
The temperature dependence of ideal gain in double diffused silicon transistors
IEEE Transactions on Electron Devices, 1968