New Photoelectric Devices Utilizing Carrier Injection
- 1 November 1952
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE
- Vol. 40 (11) , 1407-1409
- https://doi.org/10.1109/jrproc.1952.273970
Abstract
The detection of injected carriers by their absorption and by emission due to their recombination with majority carriers is discussed. Two new components are proposed: (1) the "photo-modulator," which permits modulation of a light beam by the change in absorption due to injected carriers (the photomodulator in connection with a phototransistor, or some other type of photocell, may be useful as an amplifier); and (2) the "graded seal junction," which permits the light to be transmitted to and from a p-n-junction without substantial absorption in the bulk semiconductor.Keywords
This publication has 7 references indexed in Scilit:
- Injected Light Emission of Silicon Carbide CrystalsPhysical Review B, 1951
- Infra-Red Absorption in SiliconPhysical Review B, 1950
- LXXIX. The new phenomenon of electrophotoluminescence and its possibilities for the investigation of crystal latticeJournal of Computers in Education, 1947
- Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/SiliciumZeitschrift für anorganische und allgemeine Chemie, 1939
- Researches upon electro-photo-luminescenceTransactions of the Faraday Society, 1939
- Steuerung von Elektronenströmen mit einem Dreielektrodenkristall und ein Modell einer SperrschichtThe European Physical Journal A, 1938
- Electron conductivity and photochemical processes in alkali-halide crystalsProceedings of the Physical Society, 1937