Step recovery of p−i−n diodes
- 1 November 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (11) , 927-932
- https://doi.org/10.1016/0038-1101(79)90064-9
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Calculation of the switching time in junction diodesSolid-State Electronics, 1975
- On the determination of the minority carrier lifetime from the reverse recovery transient of pnR diodesSolid-State Electronics, 1975
- On the theory of transient process after reversal of a p–i–n diode current from forward to reverse direction (I)Physica Status Solidi (a), 1972
- On the effective carrier lifetime in p-s-n rectifiers at high injection levelsSolid-State Electronics, 1969
- Analysis and characterization of P-N junction diode switchingIEEE Transactions on Electron Devices, 1964
- Minority Carrier Lifetime in p-n Junction DevicesJournal of Applied Physics, 1957
- Transient Response of a p-n JunctionJournal of Applied Physics, 1954