Ferroelectricity of heteroepitaxial Ba0.6Sr0.4TiO3 ultrathin films
- 1 September 1997
- journal article
- non volatile-memories-and-materials
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 17 (1-4) , 89-96
- https://doi.org/10.1080/10584589708012984
Abstract
Remanent polarization (2Pr) larger than 0.4 C/m2 has been obtained in heteroepitaxial Ba0.6Sr0.4TiO3 (BSTO) films, even though the thickness was reduced to as thin as 26 nm. Ferroelectricity is induced by 2-dimensional stress, which is caused by lattice mismatch between the dielectric film and the bottom electrode (SrRuO3). The Curie temperature was confirmed to shift toward higher temperature by more than 200°C. These results constitute a significant advance toward the practical realization of ferroelectric nonvolatile memories with a large capacity of 256 M to 1 G bit.Keywords
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