Growth and characterization of bulk HgZnTe crystals
- 2 December 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 79 (1-3) , 695-700
- https://doi.org/10.1016/0022-0248(86)90539-7
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Growth of Hg1−xZnxTe by molecular beam epitaxy on a GaAs(100) substrateApplied Physics Letters, 1985
- Mercury zinc telluride epilayers grown by LPEJournal of Crystal Growth, 1985
- Mechanism for dislocation density reduction in GaAs crystals by indium additionApplied Physics Letters, 1985
- THM, a breakthrough in Hg1−xCdxTe bulk metallurgyJournal of Vacuum Science & Technology A, 1985
- Effects influencing the structural integrity of semiconductors and their alloysJournal of Vacuum Science & Technology A, 1985
- Energy gap versus alloy composition and temperature in Hg1−xCdxTeJournal of Applied Physics, 1982
- The microhardness of CdxHg1-xTeJournal of Materials Science, 1982
- Thermodynamics and phase diagram calculations in II-VI and IV-VI ternary systems using an associated solution modelRevue de Physique Appliquée, 1973