Effect of gate metal on reliability of metamorphic HEMTs
- 1 January 2001
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The influence of the gate metal on the reliability of metamorphic InAlAs/InGaAs HEMTs with a gate length of 0.12 /spl mu/m was studied by biased accelerated life tests in air and in nitrogen. By replacing the Ti-Pt-Au gate by Pt-Ti-Pt-Au we found that the life time at 220/spl deg/C can be increased at least by a factor of two. An activation energy of 1.5 eV and a life time of 1.1/spl times/10/sup 6/ h at 125/spl deg/C in air were derived for MHEMTs with Pt-Ti-Pt-Au gate.Keywords
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