Millimeter wave InP HEMT technology: Performance and applications
- 1 September 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (9) , 1575-1579
- https://doi.org/10.1016/0038-1101(95)00067-4
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Manufacturability of 0.1- mu m millimeterwave low-noise InP HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
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- Ultralow-noise W-band pseudomorphic InGaAs HEMT'sIEEE Electron Device Letters, 1990
- W-band low-noise InAlAs/InGaAs lattice-matched HEMTsIEEE Electron Device Letters, 1990
- Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate lengthIEEE Electron Device Letters, 1988
- 0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHzIEEE Electron Device Letters, 1988