New technology on tri-level resist doped with dye for submicron photolithographic process
- 1 September 1983
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 1 (1) , 51-67
- https://doi.org/10.1016/0167-9317(83)90012-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Etching Characteristics for OrganosilicaJapanese Journal of Applied Physics, 1983
- Spin‐On Glass as an Intermediate Layer in a Tri‐Layer Resist ProcessJournal of the Electrochemical Society, 1982
- Multilevel Resist For Photolithography Utilizing An Absorbing Dye: Simulation And ExperimentPublished by SPIE-Intl Soc Optical Eng ,1981
- High resolution, steep profile resist patternsJournal of Vacuum Science and Technology, 1979
- Linewidth variations in photoresist patterns on profiled surfacesIEEE Transactions on Electron Devices, 1975
- Quantitative Evaluation of Photoresist Patterns in the 1-μm RangeApplied Optics, 1975