Integration of LED's and GaAs circuits by MBE regrowth
- 1 July 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (7) , 819-821
- https://doi.org/10.1109/68.311465
Abstract
Fully processed VLSI GaAs MESFET circuits, available through the MOSIS service, have recently been shown to be electrically stable after 3-h thermal cycles at 500/spl deg/C. It is therefore feasible to epitaxially regrow photonic device heterostructures directly on high-density electronic circuits yielding monolithic optoelectronic VLSI circuits. The MBE growth, planarization, and LED fabrication of the first optoelectronic circuit using this novel integration technique are described.Keywords
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