C-V characteristics of ion implanted depletion IGFETs and buried channel CCDs

This publication has 6 references indexed in Scilit:

• Modeling of an ion-implanted silicon-gate depletion-mode IGFET
  IEEE Transactions on Electron Devices, 1975
• Ion implantation for threshold control in COSMOS circuits
  IEEE Transactions on Electron Devices, 1974
• Depletion-mode IGFET made by deep ion implantation
  IEEE Transactions on Electron Devices, 1973
• The Buried Channel Charge Coupled Device
  Bell System Technical Journal, 1972
• THE ADJUSTMENT OF MOS TRANSISTOR THRESHOLD VOLTAGE BY ION IMPLANTATION
  Applied Physics Letters, 1971
• The Si-SiO₂Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
  Bell System Technical Journal, 1967