The structure of the indium-Si(111) (7 3
- 10 October 1995
- journal article
- Published by Elsevier in Surface Science
- Vol. 340 (1-2) , 36-48
- https://doi.org/10.1016/0039-6028(95)00516-1
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Modification of overlayer growth kinetics by surface interlayers: The Si(111)√7×√3-indium surfaceJournal of Vacuum Science & Technology A, 1995
- Spectroscopy of interface states of indium-Si(111)(4 × 1) and (1 × 1)R30° surfacesSurface Science, 1994
- Pseudomorphic-to-close-packed transition. II. Application to Ni on Mo(110)Physical Review B, 1994
- Pseudomorphic-to-close-packed transition. I. General formulationPhysical Review B, 1994
- In overlayers on Si(111)7×7: Growth and evolution of the electronic structurePhysical Review B, 1993
- Structure analysis of the single-domain Si(111)4 × 1-In surface by μ-probe Auger electron diffraction and μ-probe reflection high energy electron diffractionSurface Science, 1991
- Si(111)-(4×1)In surface reconstruction studied by impact-collision ion-scattering spectrometryPhysical Review B, 1991
- Growth, structure and energetics of ultrathin ferromagnetic single crystal films on Mo(110)Surface Science, 1990
- Electronic properties of ultrathin nickel films on W(110)Physical Review B, 1990
- Indium-induced reconstructions of the Si(111) surface studied by scanning tunneling microscopyPhysical Review B, 1987