Negative differential resistance due to single-electron switching
- 15 February 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (7) , 1042-1044
- https://doi.org/10.1063/1.123449
Abstract
We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport.
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