Negative differential resistance due to single-electron switching

Preprint

21 September 1998

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9809272

Abstract

We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/Al$_{x}$O$_{y}$ islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport.

Keywords

NEGATIVE DIFFERENTIAL RESISTANCE
ELECTRON SWITCHING
SINGLE ELECTRON
RESISTANCE DUE
ORTHODOX
COULOMB
NDR

All Related Versions

Version 1, 1998-09-21, ArXiv
Published version: Applied Physics Letters, 74 (7), 1042.

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