Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots
- 20 October 2001
- journal article
- Published by Elsevier in Surface Science
- Vol. 492 (3) , 345-353
- https://doi.org/10.1016/s0039-6028(01)01479-0
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- A model for the appearance of chevrons on RHEED patterns from InAs quantum dotsSurface Science, 2001
- Nanometer-Scale Resolution of Strain and Interdiffusion in Self-AssembledQuantum DotsPhysical Review Letters, 2000
- Ordering and shape of self-assembled InAs quantum dots on GaAs(001)Applied Physics Letters, 2000
- The importance of high-index surfaces for the morphology of GaAs quantum dotsJournal of Applied Physics, 1999
- Shape transition of InAs quantum dots by growth at high temperatureApplied Physics Letters, 1999
- Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloyingPhysical Review B, 1998
- Transmission-electron microscopy study of the shape of buried quantum dotsPhysical Review B, 1998
- Modification of InAs quantum dot structure by the growth of the capping layerApplied Physics Letters, 1998
- Atomic structure of faceted planes of three-dimensional InAs islands on GaAs(001) studied by scanning tunneling microscopeApplied Physics Letters, 1998
- Determination of the shape of self-organized InAs/GaAs quantum dots by reflection high energy electron diffractionApplied Physics Letters, 1998