Broader spectral width InGaAsP stacked active layer superluminescent diodes
- 12 March 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (11) , 987-989
- https://doi.org/10.1063/1.102571
Abstract
Fabrication and characteristics of broader spectral width 1.3 μm and 1.5 μm InGaAsP superluminescent diodes having a novel stacked active layer (STAC-SLDs) structure are reported. The emission spectral width is successfully broadened as much as twice that of conventional SLDs, yielding spectral widths of 80 and 140 nm for the 1.3 μm and the 1.5 μm SLD, respectively.Keywords
This publication has 10 references indexed in Scilit:
- High-power, broad-band InGaAsP superluminescent diode emitting at 1.5 μmJournal of Applied Physics, 1990
- High-power, high-efficiency 1.3 μm superluminescent diode with a buried bent absorbing guide structureApplied Physics Letters, 1989
- High-power 1.3 μm superluminescent diodeApplied Physics Letters, 1989
- High coupled power 1.3 μm edge-emitting light-emitting diode with a rear window and an integrated absorberApplied Physics Letters, 1988
- High power, high efficiency window buried heterostructure GaAlAs superluminescent diode with an integrated absorberApplied Physics Letters, 1987
- New measurement system for fault location in optical waveguide devices based on an interferometric techniqueApplied Optics, 1987
- Fiber-optic gyroscopes with broad-band sourcesJournal of Lightwave Technology, 1983
- Lateral confinement InGaAsP superluminescent diode at 1.3 µmIEEE Journal of Quantum Electronics, 1983
- Double-channel planar buried-heterostructure laser diode with effective current confinementElectronics Letters, 1982
- A stripe-geometry double-heterostructure amplified-spontaneous-emission (superluminescent) diodeIEEE Journal of Quantum Electronics, 1973