Electron Emission from Aluminum after Low-Temperature Deformation

Abstract
Emission of electrons (``exo‐electrons'') was observed by means of an open‐window Geiger—Müller counter during annealing of aluminum wire subsequent to low‐temperature deformation. A mathematical model was developed based on the concept that the emission is controlled by the diffusion of point defects to the surface. Interpretation of the experimental data yielded an activation energy of 0.44±0.03 eV for the migration of the point defects. Electrical resistivity measurements made at 4.2°K on aluminum deformed at a low temperature revealed that defects anneal out in the general temperature range in which emission is observed.

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