Investigation of the intrinsic SiO2 area dependence using TDDB testing and model integration into the design process
- 1 June 1998
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 38 (6-8) , 1121-1125
- https://doi.org/10.1016/s0026-2714(98)00140-1
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- On the breakdown statistics of very thin SiO2 filmsThin Solid Films, 1990