Broad-band extreme ultraviolet lithography with a wet-silylated and dry-developed resist
- 1 January 1996
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 30 (1-4) , 291-294
- https://doi.org/10.1016/0167-9317(95)00248-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Silylated positive tone resists for EUV lithography at 14 nmMicroelectronic Engineering, 1994
- Fabrication of 0.1 µm Line-and-Space Patterns using Soft X-Ray Reduction LithographyJapanese Journal of Applied Physics, 1994
- Comparative study between gas- and liquid-phase silylation for the diffusion-enhanced silylated resist processJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- X-ray photoelectron spectroscopy and infrared study of the processing of a silylated positive photoresistJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991