An empirical model for the L/sub eff/ dependence of hot-carrier lifetimes of n-channel MOSFETs
- 1 November 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (11) , 500-502
- https://doi.org/10.1109/55.43116
Abstract
An empirical model that describes the dependence of hot-carrier lifetime on the effective channel length of an n-channel MOSFET, allowing the estimation of the lifetimes of transistors of a given length based on data from a limited number of channel lengths, is presented. The model takes into account the localization of hot-carrier induced damage and shows that the size of the damaged region relative to the total length of the transistor is important in determining the effect of hot-carrier-damage-induced transistor characteristics. The results are integrated into two commonly used equations for hot-carrier lifetimes of MOSFETs of a given channel length under DC operation. The model is experimentally verified for MOSFETs of effective channel lengths between 0.45 and 2.7 mu m.Keywords
This publication has 5 references indexed in Scilit:
- New insight into hot-electron-induced degradation of n-MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Lateral distribution of hot-carrier-induced interface traps in MOSFETsIEEE Transactions on Electron Devices, 1988
- Hot-electron-induced MOSFET degradation—Model, monitor, and improvementIEEE Transactions on Electron Devices, 1985
- Relationship between MOSFET degradation and hot-electron-induced interface-state generationIEEE Electron Device Letters, 1984
- An empirical model for device degradation due to hot-carrier injectionIEEE Electron Device Letters, 1983