Model for the electric fields in LDD MOSFETs. I. Field peaks on the source side
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (2) , 375-381
- https://doi.org/10.1109/16.19939
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Model for the electric fields in LDD MOSFETs. II. Field distribution on the drain sideIEEE Transactions on Electron Devices, 1989
- MINIMOS 3: A MOSFET simulator that includes energy balanceIEEE Transactions on Electron Devices, 1987
- Two-dimensional phosphorus diffusion for soft drains in silicon MOS transistorsApplied Physics A, 1986
- New degradation phenomena by source and drain hot-carriers in half-micron P-MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- The effects of weak gate-to-drain(source) overlap on MOSFET characteristicsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Hot carrier degradation modes and optimization of LDD MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Enhancement of hot-electron currents in graded-gate-oxide (GGO)-MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984