An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 8 (11) , 393-395
- https://doi.org/10.1109/75.736257
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- High-gain 150-215-GHz MMIC amplifier with integral waveguide transitionsIEEE Microwave and Guided Wave Letters, 1999
- Fully passivated W-band InAlAs/InGaAs/InP monolithic low noise amplifiersIEE Proceedings - Microwaves, Antennas and Propagation, 1996
- W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/IEEE Microwave and Guided Wave Letters, 1995
- 0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/IEEE Electron Device Letters, 1994
- 650-AA self-aligned-gate pseudomorphic Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.2/In/sub 0.8/As high electron mobility transistorsIEEE Electron Device Letters, 1992