Elastic energies and order in epitaxial Si-Ge alloys
- 15 December 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (18) , 12554-12557
- https://doi.org/10.1103/physrevb.40.12554
Abstract
Elastic energies, and configurational and phonon entropies of Si-Ge alloys epitaxially grown on Si substrates are calculated as a function of long-range order. A Keating-type potential is used to describe interactions within large (≤512 atom) periodic unit cells with configurations appropriate to random and partially ordered alloys. We find an order-disorder transition into the experimentally observed rhombohedral structure at ∼60 K. No reasonable change in potential parameters could increase this temperature to the experimental value ∼800 K, implying that the transition is not elastically driven.This publication has 17 references indexed in Scilit:
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