Selective etching of InP and InGaAsP over AlInAs using CH4/H2 reactive ion etching
- 14 June 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (24) , 3189-3191
- https://doi.org/10.1063/1.109125
Abstract
Selective etching of InP and InGaAsP over AlInAs was obtained using CH4/H2 reactive ion etching without the addition of a fluorine containing gas. By tuning the methane‐to‐hydrogen ratio, pressure, and power, sputter desorption of the reacted AlInAs etch products can be inhibited, thus enabling AlInAs to be used as an etch stop layer. The use of a fluorine free mixture enables dielectrics such as silicon dioxide or nitride to be used as the masking material.Keywords
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