Electrical Properties of Silicon Diode Array Camera Targets Made by Boron Ion Implantation

Silicon diode targets used as the image‐sensing element of video camera tubes have been successfully fabricated with one photolithographic step using boron ion implantation to form the array of ∼ 800 000 p⁺n diodes. Targets have been made reproducibly in this way with total leakage currents $\text{≲ 10\hspace{0.17em}}\mathrm{nA}$ at 12‐V bias and 0–2 low‐intensity white video defects per target. The results, which are insensitive to changes in dose and energy, show that heavily boron‐implanted oxides can be annealed to give low‐surface recombination velocity (S₀ ∼ 7 cm/sec) and fixed charge (Q_ss/q ≃ 2.0 × 10¹¹ cm⁻²). In addition, the bulk effective lifetime in the space‐charge region of the implanted diodes is measured to be τ > 200 μsec.