Investigation of single-event upset (SEU) in an advanced bipolar process
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 35 (6) , 1573-1577
- https://doi.org/10.1109/23.25500
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Lateral charge transport from heavy-ion tracks in integrated circuit chipsIEEE Transactions on Nuclear Science, 1988
- Physical SEU model for circuit simulationsIEEE Transactions on Nuclear Science, 1988
- Transient Measurements of Ultrafast Charge Collection in Semicouductor DiodesIEEE Transactions on Nuclear Science, 1987
- Charge Collection in Bipolar TransistorsIEEE Transactions on Nuclear Science, 1987
- Experimental Evidence for a New Single-Event Upset (SEU) Mode in a CMOS SRAM Obtained from Model VerificationIEEE Transactions on Nuclear Science, 1987
- Single-Event Upset (SEU) Model Verification and Threshold Determination Using Heavy Ions in a Bipolar Static RAMIEEE Transactions on Nuclear Science, 1985