Solid state quantum computer development in silicon with single ion implantation
- 10 November 2003
- journal article
- review article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 94 (11) , 7017-7024
- https://doi.org/10.1063/1.1622109
Abstract
Spawned by the finding of efficient quantum algorithms, the development of a scalable quantum computer has emerged as a premiere challenge for nanoscience and nanotechnology in the last years. Spins of electrons and nuclei in atoms embedded in silicon are promising quantum bit (qubit) candidates. In this article we describe single atom doping strategies and the status of our development of single atom qubit arrays integrated with control gates and readout structures in a “top down” approach. We discuss requirements for qubit array formation by single ion implantation, and integration with semiconductor processing.
This publication has 41 references indexed in Scilit:
- Hydrogenic Spin Quantum Computing in Silicon: A Digital ApproachPhysical Review Letters, 2003
- Mechanism of dopant segregation tointerfacesPhysical Review B, 2002
- Excellent charge offset stability in a Si-based single-electron tunneling transistorApplied Physics Letters, 2001
- Towards the fabrication of phosphorus qubits for a silicon quantum computerPhysical Review B, 2001
- Single-spin measurement using single-electron transistors to probe two-electron systemsPhysical Review B, 2000
- Novel method for silicon quantum wire transistor fabricationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Interaction of slow, very highly charged ions with surfacesProgress in Surface Science, 1999
- Optimized subamorphizing silicon implants to modify diffusion and activation of arsenic, boron, and phosphorus implants for shallow junction creationJournal of Applied Physics, 1999
- Stabilized Hollow Ions Extracted in VacuumPhysical Review Letters, 1997
- Interaction of slow multicharged ions with solid surfacesSurface Science Reports, 1997