40-GHz-bandwidth amplifier IC using AlGaAs/GaAsballistic collection transistors with carbon-dopedbases
- 14 April 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (8) , 635-636
- https://doi.org/10.1049/el:19940446
Abstract
An fmax of 192 GHz is achieved by a ballistic collection transistor with a launcher and a heavily carbon-doped base. A two-stage direct-coupled amplifier IC fabricated using the transistors provides a high gain of 16.8 dB with a 3 dB-down frequency of 40 GHz.Keywords
This publication has 2 references indexed in Scilit:
- Ultrahigh-speed AlGaAs/GaAs ballistic collection transistors using carbon as p -type dopantElectronics Letters, 1993
- 18.5 GHz bandwidth monolithic preamplifier using AlGaAs/GaAs ballistic collection transistorsElectronics Letters, 1991