Properties of a SiNx/Si/GaAs system having amorphous and crystalline Si interlayers on (100) GaAs with different surface superstructures
- 13 January 1992
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (2) , 204-206
- https://doi.org/10.1063/1.106964
Abstract
A variation of the electrical properties of SiNx/Si/GaAs system having amorphous and crystalline Si (a‐Si, c‐Si) interlayers on (100) GaAs with c(4×4), 2×4, and 4×6 surfaces is demonstrated. We interpret the findings in terms of Ga and As incorporation into the Si interlayers, which should form acceptor and donor levels, respectively. The dissimilar effects of a‐Si and c‐Si interlayers are attributed to Ga segregation during the growth of c‐Si, which is suggested by the secondary‐ion mass spectroscopy of c‐Si films grown on GaAs.Keywords
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