Doping properties of Ge on GaAs (100) grown by MBE
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 421-424
- https://doi.org/10.1016/0022-0248(89)90433-8
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Nucleation and growth of GaAs on Ge and the structure of antiphase boundariesJournal of Vacuum Science & Technology B, 1986
- Diffusion of As and Ge during growth of GaAs on Ge substrate by molecular-beam epitaxy: Its effect on the device electrical characteristicsJournal of Applied Physics, 1986
- On the adjustability of the “abrupt” heterojunction band-gap discontinuitySurface Science, 1983