Diffusion of As and Ge during growth of GaAs on Ge substrate by molecular-beam epitaxy: Its effect on the device electrical characteristics
- 15 May 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (10) , 3601-3604
- https://doi.org/10.1063/1.336790
Abstract
Owing to surface-exchange reaction and diffusion of As and Ge species during crystal growth by molecular-beam epitaxy, the electrical characteristics of n-GaAs/p-Ge heterojunctions are found to be affected significantly. The junctions grown at temperatures higher than 500 °C become thyristorlike npnp structures. The junctions grown below 500 °C exhibited normal current–voltage characteristics with the p/n junction apparently displaced into the Ge.This publication has 15 references indexed in Scilit:
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