+55°C pulse lasing at 1.56 µm of all-monolithicInGaAlAs/InP vertical cavity lasers
- 13 May 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (10) , 811-812
- https://doi.org/10.1049/el:19990533
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Monolithic vertical cavity device lasing at 1.55µm in InGaAlAs systemElectronics Letters, 1997
- Refractive indexes of (Al,Ga,In)As epilayers on InP for optoelectronic applicationsIEEE Photonics Technology Letters, 1992