The form and stability of current-voltage characteristics for ideal thermal switching
- 1 December 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (11) , 666-668
- https://doi.org/10.1063/1.1655353
Abstract
Analyses of ideal models, where heat flow is restricted to one direction, result in good qualitative agreement with the current‐voltage characteristics observed in materials that exhibit an abrupt change in electrical conductivity at a critical temperature, such as VO2. Stability criteria are proved for thermally induced ``S and N‐shaped'' characteristics in two different geometries, where the internal current or field distributions are nonuniform.Keywords
This publication has 10 references indexed in Scilit:
- Theory of electrical instabilities of mixed electronic and thermal originPhysical Review B, 1974
- Switching Phenomena in Thin FilmsJournal of Vacuum Science and Technology, 1973
- Reversible Switching in Thin Amorphous Chalcogenide Films—Electronic EffectsPhysical Review Letters, 1973
- Electrical stability of bulk "S-shaped" negative differential conductivity mediaIEEE Transactions on Electron Devices, 1973
- Analysis of an inhomogeneous bulk "S-shaped" negative differential conductivity element in a circuit containing reactive elementsIEEE Transactions on Electron Devices, 1973
- Analysis of Bulk Negative Differential Mobility Element in a Circuit Containing Reactive ElementsJournal of Applied Physics, 1972
- Mechanism of negative resistance and filamentary conduction in thermal switching devicesPhysica Status Solidi (a), 1971
- Thermal Effects in Amorphous-Semiconductor SwitchingApplied Physics Letters, 1971
- Filamentary Conduction in VO2 Coplanar Thin-Film DevicesApplied Physics Letters, 1971
- Nonlinear Analysis of the Gunn EffectPhysical Review B, 1966