Preparation of Nanocrystalline Silicon by Pulsed Plasma Processing
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Preparation of monodispersed colloidal particlesPublished by Elsevier ,2003
- Selective Etching of Hydrogenated Amorphous Silicon by Hydrogen PlasmaJapanese Journal of Applied Physics, 1994
- Frequency effects in processing plasmas of the VHF bandPlasma Sources Science and Technology, 1993
- Controlling the Solid-Phase Nucleation of Amorphous Si by Means of a Substrate Step Structure and Local Phosphorus DopingJapanese Journal of Applied Physics, 1993
- Role of Hydrogen Radical Treatment in Nucleation of Nanocrystalline SiliconJapanese Journal of Applied Physics, 1992
- Growth Mechanism of Microcrystalline Silicon Prepared by Alternating Deposition of Amorphous Silicon and Hydrogen Radical AnnealingJapanese Journal of Applied Physics, 1992
- Preparation of Microcrystalline Silicon Films by Very-High-Frequency Digital Chemical Vapor DepositionJapanese Journal of Applied Physics, 1992
- Quantum size effects on photoluminescence in ultrafine Si particlesApplied Physics Letters, 1990
- The adsorption of hydrogen on Si(111)-7×7 as studied by multiple internal reflection spectroscopyThe Journal of Chemical Physics, 1989
- Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion IrradiationJapanese Journal of Applied Physics, 1989