Role of Hydrogen Radical Treatment in Nucleation of Nanocrystalline Silicon

Publisher Website
Google Scholar
Abstract
We have investigated the nucleation process and crystallization process in the fabrication of nanocrystalline silicon (nc-Si). The nanocrystallization process consists of deposition of hydrogenated amorphous Si (a-Si:H) and treatment of hydrogen radicals. Nuclei of nanocrystallization are formed on the a-Si:H surface only if the atmosphere is hydrogen rich. Nuclei are not formed under the normal growth conditions of a-Si:H, not to be found either on the surface or inside as-grown a-Si:H. Growth of nc-Si is caused by hydrogen radicals diffusing through the a-Si:H layer to the nuclei.