Determination of P/Al ratio in phosphorus-doped aluminium oxide thin films by XRF, RBS and FTIR
- 1 March 1995
- journal article
- research article
- Published by Springer Nature in Microchimica Acta
- Vol. 119 (1-2) , 13-22
- https://doi.org/10.1007/bf01244850
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Atomic layer epitaxy (ALE) on porous substratesApplied Surface Science, 1994
- Compositional and structural analysis of aluminum oxide films prepared by plasma-enhanced chemical vapor depositionThin Solid Films, 1994
- Atomic layer epitaxy: chemical opportunities and challengesThin Solid Films, 1993
- Interactive personal-computer data analysis of ion backscattering spectraNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Aluminum oxide thin films prepared by chemical vapor deposition from aluminum acetylacetonateApplied Physics Letters, 1992
- Self-limiting behavior of the growth of Al2O3 using sequential vapor pulses of TMA and H2O2Applied Surface Science, 1992
- Microstructural evolution and properties of nanocrystalline alumina made by reactive sputtering depositionThin Solid Films, 1991
- Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processesMaterials Chemistry and Physics, 1991
- Atomic layer epitaxyMaterials Science Reports, 1989
- Metalorganic molecular beam epitaxy of γ-Al2O3 films on Si at low growth temperaturesApplied Physics Letters, 1988