Evaluation of Surface State at Oxidized Silicon from the Characteristics of Surface Varactor Diode
- 1 June 1965
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 4 (6) , 394-399
- https://doi.org/10.1143/jjap.4.394
Abstract
Surface state at the interface of silicon and oxidized silicon are studied by observing the capacitance-voltage characteristic of silicon surface varactor diodes. Typical value of the trap density is 1×1011cm-2 at 0.24 eV above the center of band gap and 4×1011cm-2 at the center of band gap. Validity of the procedure for obtaining the state density from varactor characteristics is also considered briefly.Keywords
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