Assessment of doped CdxHg1-xTe structures using bevelled sections
- 1 January 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (1S) , S281-S285
- https://doi.org/10.1088/0268-1242/8/1s/061
Abstract
Doped homo- and heterostructures of CdxHg1-xTe (CMT) are required for some types of new-generation devices. These structures have been grown by metal organic vapour phase epitaxy (MOVPE) at approximately 360 degrees C onto both CdTe and GaAs (buffered with CdTe) substrates. The structures were produced using both acceptor and donor doping with arsenic and iodine respectively, and the junctions formed following annealing in mercury to eliminate metal vacancies. This paper summarizes progress in characterizing these junctions both in terms of x and electrical behaviour.Keywords
This publication has 13 references indexed in Scilit:
- MOVPE growth and characterization of doped CdxHg1-xTe structuresSemiconductor Science and Technology, 1991
- Impurities and metalorganic chemical-vapor deposition growth of mercury cadmium tellurideJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Extrinsic doping at low concentrations for CDxHg1-xTe layers grown by MOVPEJournal of Crystal Growth, 1990
- Incorporation and activation of group V elements in MOVPE-grown CdxHg1-xTeJournal of Crystal Growth, 1989
- The application of ion beam bevel sectioning and post‐sputter etch treatment in Auger crater‐edge profilingSurface and Interface Analysis, 1989
- Substrate orientation effects in CdxHg1−xTe grown by MOVPEJournal of Crystal Growth, 1989
- EBIC characterization of electrically active defects in (Hg,Cd)TeJournal of Vacuum Science & Technology A, 1983
- Composition–Depth profiling and interface analysis of surface coatings using ball cratering and the scanning auger microprobeSurface and Interface Analysis, 1979
- Auger depth profiling of thick insulating films by angle lappingJournal of Vacuum Science and Technology, 1978
- Electron-Beam Excited Minority-Carrier Diffusion Profiles in SemiconductorsJournal of Applied Physics, 1972