Steady-State Photoconductivity in the Presence of Traps

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Abstract
An analysis is performed of the dependence of lifetime on excess carrier density when traps are present. Using only realistic assumptions, a relatively simple solution is obtained. Different types of behavior can be obtained, depending on recombination parameters and the concentration and energy-level position of the traps. An especially interesting situation exists in which lifetime versus excess density curve shows no indication of trapping, yet incorrect recombination parameters are obtained if trapping is ignored. Experimental confirmation of the analytical results is presented.