Recombination and Trapping in 60Co Gamma-Irradiated n-Type Germanium

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Abstract
Measurements of carrier lifetime from 110° to 330°K have been made on samples of Sb- and As-doped Ge after irradiation at 77°K and subsequent isochronal annealing. A recombination level near the center of the band gap and a trapping level were introduced by the irradiation, and a new trap was created by the anneal in each case. The recombination centers constituted a small fraction of the total defect density. Energy-level positions and capture cross sections are presented for the observed levels. It is found that the trapping levels exhibit a multiple negative charge at low temperatures, and one of the traps is tentatively associated with the Sb-divacancy complex. The annealing stages are compared with those observed in the investigation of other properties, and several stages are found to resemble those resulting from the formation and breakup of composite defects containing oxygen.