Wetting droplet instability and quantum ring formation
- 9 January 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review E
- Vol. 65 (2) , 021603
- https://doi.org/10.1103/physreve.65.021603
Abstract
InAs islands on GaAs substrates undergo a morphological change into ring-shaped configurations upon deposition of a GaAs layer after island growth. By invoking an analogy of the InAs islands to wetting droplets on solid substrates, we suggest that this transition might be brought about by a change of the surface free-energy balance at the three-phase contact-line between GaAs, InAs, and vacuum (or As atmosphere). Our scenario can also be tested in conventional liquid systems (e.g., polymers).Keywords
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