Control of size and density of self-assembled InAs dots on (0 0 1)GaAs and the dot size dependent capping process
- 1 May 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 201-202, 1146-1149
- https://doi.org/10.1016/s0022-0248(99)00005-6
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 6 references indexed in Scilit:
- Optical properties of near surface-InAs quantum dots and their formation processesPhysica E: Low-dimensional Systems and Nanostructures, 1998
- Intermixing and shape changes during the formation of InAs self-assembled quantum dotsApplied Physics Letters, 1997
- Nature of strained InAs three-dimensional island formation and distribution on GaAs(100)Applied Physics Letters, 1994
- Self-organized growth of regular nanometer-scale InAs dots on GaAsApplied Physics Letters, 1994
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982