Intrinsic carrier concentrations in Hg1−xCdxTe with the use of Fermi–Dirac statistics
- 1 October 1985
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (7) , 2770-2772
- https://doi.org/10.1063/1.335868
Abstract
The intrinsic carrier concentrations in Hg1−xCdxTe are calculated with the use of the Fermi–Dirac statistics thus expanding on our previous calculation which employed the Boltzmann statistics. The use of Boltzmann statistics for Hg1−xCdxTe is limited to x≥0.20 and is not appropriate for the narrow band gap xx≥0.20 using both statistics are in excellent agreement. We also compare our results with those of Hansen and Schmit. Good agreement is found for the range of 0.15≤x≤0.40.This publication has 6 references indexed in Scilit:
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