Intrinsic carrier concentrations and effective masses in Hg1−xCdxTe
- 1 July 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (1) , 361-365
- https://doi.org/10.1063/1.335685
Abstract
Intrinsic carrier concentrations are calculated for the semiconductor alloy Hg1−xCdxTe. Unlike previous calculations we make no approximations to the band structure, and hence to the density of states, beyond those inherent in the Kane k ⋅ p theory. Our results are compared with the recent calculation of Hansen and Schmit. Close agreement is found in the low compositional x range. However, significant differences, up to 50%, were found for higher alloy compositions. The reasons for the disagreement between the two calculations are discussed.This publication has 20 references indexed in Scilit:
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