Magneto-optical absorption spectrum of a ion in a GaAs-As quantum well
- 15 February 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 51 (7) , 4637-4640
- https://doi.org/10.1103/physrevb.51.4637
Abstract
The magneto-optical absorption spectrum of a ion in a GaAs- As quantum well is calculated. We used the variational method based on a two-orbital picture of a ion, in which each wave function is represented by a linear combination of anisotropic Gaussian orbitals. The calculated magnetic-field dependence of the binding energy of a ion agrees qualitatively with the experimental result. In a magnetic field perpendicular to the well interface, the energies of the one-electron excited states of a ion are completely quantized, and broadening is essential for the calculation of the line shape of the magneto-optical absorption spectrum. We considered two types of broadening effect, lifetime broadening and inhomogeneous broadening. Only the lifetime broadening effect reproduces fairly well the observed line shape of the magneto-photoconductivity spectrum. The assumed value of the lifetime is consistent with the measured Hall mobility.
Keywords
This publication has 14 references indexed in Scilit:
- Well-width dependence ofD−cyclotron resonance in quantum wellsPhysical Review B, 1993
- Two-dimensional D- centers in the strong magnetic field limitSolid State Communications, 1992
- Occupancy of shallow donor impurities in quasi-two-dimensional systems:andstatesPhysical Review Letters, 1992
- Variational studies of two- and three-dimensionalcenters in magnetic fieldsPhysical Review B, 1992
- Excited states of the two-dimensionalcenter in magnetic fieldsPhysical Review B, 1992
- Negative-donor centers in semiconductors and quantum wellsPhysical Review Letters, 1990
- Two-dimensionalcentersPhysical Review Letters, 1990
- The Electronic Structure of a D- Centre in Strong Magnetic FieldsJournal of the Physics Society Japan, 1978
- D- States in GermainumJournal of the Physics Society Japan, 1977
- New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and GermaniumPhysical Review B, 1967